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| RB400D Diodes Shottky barrier diode RB400D Application Low current rectification External dimensions (Unit : mm) Lead size figure (Unit : mm) 1.9 2.80.2 1.60.1 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 0.05 (3) 1.0MIN. 0.150.06 0.1 0.95 0.2 0.8MIN. 00.1 0.30.6 SMD3 (2) (1) 0.95 1.90.2 0.80.1 1.10.2 0.01 Structure Silicon epitaxial planar 0.95 Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping dimensions (Unit : mm) 4.00.1 2.00.05 1.50.1 0 1.750.1 0.30.1 3.50.05 8.00.2 3.20.1 3.20.1 4.00.1 1.05MIN 00.5 5.50.2 3.20.1 1.350.1 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward voltage*1 Forward current surge peak 60Hz1cyc*1 Junction temperatuer Storage temperature (*1) Rating of per diode Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 500 3 125 -40 to +125 Unit V V mA A Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR1 IR2 Ct1 Ct2 Min. Typ. 125 20 Max. 0.55 30 50 Unit V A A pF pF Conditions IF=500mA VR=10V VR=30V VR=0V , f=1MHz VR=10V , f=1MHz Rev.B 2.4 0.4 0.1 2.90.2 Each lead has same dimension 1/3 RB400D Diodes Electrical characteristic curves (Ta=25C) 1000 Ta=75 10000 1000 Ta=125 1000 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 100 Ta=125 Ta=25 100 10 Ta=75 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 Ta=-25 1 Ta=25 1 Ta=-25 0.1 0.01 0 5 10 15 20 25 30 35 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 40 10 0.1 0 200 400 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 520 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) REVERSE CURRENT:IR(uA) 510 Ta=25 IF=0.5A n=30pcs 10 9 8 7 6 5 4 3 2 1 0 AVE:0.510uA Ta=25 VR=10V n=30pcs 10 9 8 7 6 5 4 3 2 1 0 IR DISPERSION MAP IR DISPERSION MAP AVE:1.117uA Ta=25 VR=25V n=30pcs 500 490 480 AVE:495.8mV 470 VF DISPERSION MAP 200 190 Ta=25 f=1MHz VR=0V n=10pcs 25 24 30 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 170 160 150 140 130 120 110 100 Ct DISPERSION MAP AVE:117.5pF CAPACITANCE BETWEEN TERMINALS:Ct(pF) 180 23 22 21 20 19 18 17 16 15 Ct DISPERSION MAP AVE:20.66pF PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25 f=1MHz VR=10V n=10pcs 25 20 15 10 5 Ifsm 1cyc 8.3ms AVE:5.30A 0 IFSM DISRESION MAP 30 10 10 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 AVE:9.3ns 0 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs 8 6 4 2 0 1 Ifsm 8.3ms 8.3ms 1cyc 8 6 4 2 0 Ifsm t 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 trr DISPERSION MAP 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Rev.B 2/3 RB400D Diodes 1000 1 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board 0.02 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) FORWARD POWER DISSIPATION:Pf(W) 0.5 D=1/2 Sin(180) DC REVERSE POWER DISSIPATION:PR (W) 0.01 Sin(180) D=1/2 DC 10 IM=1mA IF=10mA 1ms time 300us 1 0.001 0 0.1 10 1000 0 0.2 TIME:t(s) Rth-t CHARACTERISTICS 0.4 0.6 0.8 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 1 0 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 20 2 0A 0V t T 1 D=1/2 DC Io 2 0A 0V t D=1/2 DC T Io VR D=t/T VR=20V Tj=125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=20V Tj=125 1.5 1 0.5 Sin(180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 125 0.5 Sin(180) 0 0 25 50 75 100 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 125 Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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